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savantic semiconductor product specification silicon npn power transistors 2SC1358 d escription with to-3 package high breakdown voltage high speed switching applications designed for use in large screen color deflection circuits pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1400 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 6 v i c collector current 4.5 a i cm collector current-peak 10 a i b base current 1.5 a p t total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 2.5 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1358 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 500 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 10 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.2 v i ces collector cut-off current v ce =1400v; v be =0 1.0 ma i cbo collector cut-off current v cb =1000v; i e =0 20 a i ebo emitter cut-off current v eb =5v; i c =0 200 a h fe-1 dc current gain i c =0.5a ; v ce =15v 10 45 h fe-2 dc current gain i c =3a ; v ce =15v 5 35 t stg storage time 10 s t f fall time i c =4a; i b1 =-i b2 =1.0a p w =20s 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC1358 package outline fig.2 outline dimensions

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